Thickness dependent glass transition temperature of PECVD low-k dielectric thin films: effect of deposition methods

摘要

Low-k dielectric carbon-doped silicon dioxide films created by Plasma Enhanced Chemical Vapor Deposition (PECVD) using a six-station sequential deposition system exhibit different glass transition behavior from films created by PECVD in a single deposition station. The enhanced glass transition temperature (T_g) for the PECVD thin films of a layer consisting of six sub-layer deposited in a six-station sequential deposition system to the T_g for films of a single layer deposited in a singe deposition system is traced back to the introduced film interface effect inherent to the different deposition methods.