首页> 外文期刊>Microelectronics journal >Influence of Zr concentration on crystalline structure and its electronic properties in the new Zr_xAl_(1-x)N compound in wurtzite phase: An ab initio study
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Influence of Zr concentration on crystalline structure and its electronic properties in the new Zr_xAl_(1-x)N compound in wurtzite phase: An ab initio study

机译:锆石相中新型Zr_xAl_(1-x)N化合物中Zr浓度对晶体结构及其电子性质的影响:从头算研究

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In the present work, we have calculated the structural and electronic properties of the new Zr_xAl_(1-x)N compound in wurtzite phase for x = 0.25, 0.50 and 0.75. The study is based on density functional theory (DFT) with augmented plane wave plus local orbitals method for calculating crystal properties (FP-LAPW). Based on the graphs of the energy versus the crystal unitary cell volume for each x, we concluded that the structural properties vary with x. Special analysis is made on the bond lengths Zr-N and Al-N. And based on the relations of dispersion, we see that the electronic properties vary substantially with x. A remarkable fact is that we predict a possible semiconductor-metal transition for any x≤0.25.
机译:在目前的工作中,我们已经计算出新的Zr_xAl_(1-x)N化合物在纤锌矿相中的结构和电子性质,其中x = 0.25、0.50和0.75。这项研究是基于密度泛函理论(DFT)的增强平面波加局部轨道方法来计算晶体特性(FP-LAPW)。根据每个x的能量与晶体单晶胞体积的关系图,我们得出结论,结构特性随x的变化而变化。对键长Zr-N和Al-N进行了特殊分析。根据色散关系,我们发现电子性质随x的变化而变化。一个显着的事实是,我们预测x≤0.25的任何可能的半导体-金属过渡。

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