Raman Scattering Of Polycrystalline 3c- Sic Film Deposited On A1n Buffer Layer By Using Cvd With Hmds

摘要

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on A1N buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar+H_2). The Raman spectra of SiC films deposited on AlN layer of before and after annealing were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at 1180 ℃ on A1N of after annealing.