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首页> 外文期刊>Microelectronics journal >A Cmos Piecewise Curvature-compensated Voltage Reference
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A Cmos Piecewise Curvature-compensated Voltage Reference

机译:Cmos分段曲率补偿电压基准

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This paper presents a novel approach to the design of a high-precision CMOS voltage reference. The proposed circuit utilizes MOS transistors instead of bipolar transistors to generate positive and negative temperature coefficient (TC) currents summed up to a resistive load to generate low TC reference voltage. A piecewise curvature-compensation technique is also used to reduce the TC of the reference voltage within a wider temperature range. The output reference voltage can be adjusted in a wide range according to different system requirements by setting different parameters such as resistors and transistor aspect ratios. The proposed circuit is designed for TSMC 0.6 μm standard CMOS process. Spectre-based simulations demonstrate that the TC of the reference voltage is 4.3 ppm/ C with compensation compared with 107 ppm/ C without compensation in the temperature ranges from - 15 to 95 ℃ using a 1.5V supply voltage.
机译:本文提出了一种新颖的方法来设计高精度CMOS电压基准。所提出的电路利用MOS晶体管代替双极型晶体管来产生正负温度系数(TC)电流,这些电流加到电阻负载上以产生低TC参考电压。分段曲率补偿技术还用于在较宽的温度范围内降低参考电压的TC。通过设置不同的参数(例如电阻和晶体管的长宽比),可以根据不同的系统要求在宽范围内调节输出参考电压。拟议的电路设计用于台积电0.6μm标准CMOS工艺。基于频谱的仿真表明,在使用15V电源电压的情况下,从-15至95℃的温度范围,带有补偿的参考电压的TC为4.3 ppm / C,而没有补偿的为107 ppm / C。

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