Growth Of B_xga_(1-x)as, B_xal_(1-x)as And B_xga_(1-x-y)in_yas Epilayers On (001)gaas By Low Pressure Metalorganic Chemical Vapor Deposition

摘要

High quality zinc-blende B_xGa_(1-x)As, B_xAl_(1-x)As, B_xCa_(1-x-y)In_yAs and relevant MQW structures containing 10-period BGaAs/GaAs and BGaInAs/GaAs have been successfully grown on exactly-oriented (0 01 )GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminum, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase boron mole fraction. In this study, the maximum boron composition (x) of 5.8% and 1.3% was achieved at the same growth temperature of 580 C for bulk B_xGa_(1-x)As and B_xAl_(1-x)As, respectively. 11 K photoluminescence (PL) peak wavelength of lattice-matched B_xGa_(1-x-y)In_yAs epilayer with boron composition of about 4% reached 1.24 μm.