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Accurate silicon dummy structure model for nonlinear microwave FinFET modeling

机译:用于非线性微波FinFET建模的精确硅虚拟结构模型

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The dummy test structures based de-embedding techniques allow one to quickly subtract out part of the parasitic contributions from the microwave transistor measurements without the need of explicit determination of the associated circuit model. But this means that the problem of determining the complex network representing the dummy structures is only by-passed rather than solved. Consequently, this paper is aimed at extracting accurate lumped element models for silicon "open" and "short" structures in order to extend the nonlinear microwave modeling of on-wafer FinFETs at the calibration plane corresponding to the probe tips without need of any shift of the reference plane.
机译:基于虚拟测试结构的去嵌入技术使人们可以从微波晶体管测量中快速减去一部分寄生贡献,而无需明确确定相关的电路模型。但这意味着,绕过确定代表虚构结构的复杂网络的问题只是被绕过而不是解决。因此,本文旨在为硅“开放”和“短”结构提取准确的集总元件模型,以便在与探针尖端相对应的校准平面上扩展晶圆上FinFET的非线性微波建模,而无需任何偏移。参考平面。

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