Design of micropower class AB transconductors: A systematic approach

摘要

A systematic design approach to achieve micropower class AB CMOS transconductors is presented. It includes techniques to get rail-to-rail operation and continuous transconductance tuning, based on floating and Quasi-Floating Gate transistors. Application of the proposed design approach leads to a new family of high-performance power-efficient class AB CMOS transconductors. To illustrate the feasibility of this approach, 12 transconductors derived from this common framework have been designed and fabricated in a 0.5 μrn CMOS technology. Measurement results show THD values for 2 V inputs of -56 dB for a static power of 300 μW and silicon area ＜ 0.07 mm~2.