首页> 外文期刊>Microelectronics journal >Improved memristor-based relaxation oscillator
【24h】

Improved memristor-based relaxation oscillator

机译:改进的基于忆阻器的张弛振荡器

获取原文
获取原文并翻译 | 示例
       

摘要

This paper presents an improved memristor-based relaxation oscillator which offers higher frequency and wider tunning range than the existing reactance-less oscillators. It also has the capability of operating on two positive supplies or alternatively a positive and negative supply. Furthermore, it has the advantage that it can be fully integrated on-chip providing an area-efficient solution. On the other hand, The oscillation concept is discussed then a complete mathematical analysis of the proposed oscillator is introduced. Furthermore, the power consumption of the new relaxation circuit is discussed and validated by the PSPICE circuit simulations showing an excellent agreement. MATLAB results are also introduced to demonstrate the resistance range and the corresponding frequency range which can be obtained from the proposed relaxation oscillator.
机译:本文提出了一种改进的基于忆阻器的张弛振荡器,它比现有的无电抗振荡器具有更高的频率和更宽的调谐范围。它还具有在两个正电源或正负电源上运行的能力。此外,它具有可以完全集成在片上的优势,从而提供了一种节省面积的解决方案。另一方面,讨论了振荡概念,然后对提出的振荡器进行了完整的数学分析。此外,新的弛豫电路的功耗已通过PSPICE电路仿真进行了讨论并得到了验证,该仿真显示了极好的一致性。还介绍了MATLAB结果,以证明可以从所提出的张弛振荡器获得的电阻范围和相应的频率范围。

著录项

  • 来源
    《Microelectronics journal》 |2013年第9期|814-820|共7页
  • 作者单位

    Nanoelectronics Integrated Systems Center (NISC), Nile University, Cairo, Egypt;

    Nanoelectronics Integrated Systems Center (NISC), Nile University, Cairo, Egypt,Engineering Mathematics Department, Cairo University, Egypt;

    Nanoelectronics Integrated Systems Center (NISC), Nile University, Cairo, Egypt;

    Electrical Engineering Department, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia;

    Nanoelectronics Integrated Systems Center (NISC), Nile University, Cairo, Egypt,Engineering Mathematics Department, Cairo University, Egypt;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Memristor; Reactance-less oscillator; Relaxation oscillator; Memristive circuits;

    机译:忆阻器无电抗振荡器弛张振荡器;忆阻电路;
  • 入库时间 2022-08-18 01:26:25

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号