Systematic and random variability analysis of two different 6T-SRAM layout topologies

摘要

This paper studies the device variability influence on 6T-SRAM cells in a function of the regularity level of their layout. Systematic and random variations have been analyzed when these memory circuits are implemented on a 45 nm technology node. The NBTI aging relevance on these cells has been also studied for two layout topologies and SNM has been seen as the parameter that suffers the highest impact with respect to cell aging and variability.