Low-voltage solid electrolyte-gated OFETs for gas sensing applications

摘要

A polyanionic proton conductor, named poly(4-styrenesulfonic acid) (PSSH), was used to gate an Organic Thin-Film Transistor (OFET) based on p-type poly(2,5-bis(3-tetradecylthiophen-2-yl)thienol [3,2-b] thiophene) (pBTTT-C14) organic semiconductor (OSC). Different device configurations were evaluated and a bottom gate - top contact (BGTC) device was investigated as transducer for gas sensing measurements. The sensors' performance in terms of stability, repeatability and reproducibility were evaluated when the device was exposed to different concentrations of 1-butanol. Comparison with a conventionally gated OFET (SiO_2 dielectric instead of PSSH) was also performed.