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A novel simulation methodology for full chip-package thermo-mechanical reliability investigations

机译:完整芯片封装热机械可靠性研究的新型仿真方法

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摘要

A methodology for simulating the accurate 3D structural details of a non-planarized technology chips is presented. FEM is a powerful tool used for electrical, thermal and mechanical analysis in the microelectronics industry. Manual geometry and finite element mesh generation of a 3D non-planar chip topology is extremely tedious and time consuming. Therefore, a new method, which is automatic or semi-automatic, is required to drastically reduce the pre-processing effort required for finite element simulations. Our proposed approach uses a virtual semiconductor fabrication technique to create geometry and finite element mesh on complex chip topology features. A microscopic power metal stack of a power IC was simulated to demonstrate this new simulation methodology and the results are presented. These numerical simulations, which included the non-linear behavior in the matrix, show that the detailed information of the large stress and strain gradients in the micro-fields can be obtained.
机译:提出了一种用于仿真非平面化技术芯片的精确3D结构细节的方法。 FEM是微电子行业中用于电气,热学和机械分析的强大工具。 3D非平面芯片拓扑的手动几何和有限元网格生成非常繁琐且耗时。因此,需要一种自动或半自动的新方法来大大减少有限元模拟所需的预处理工作。我们提出的方法使用虚拟半导体制造技术在复杂的芯片拓扑特征上创建几何形状和有限元网格。仿真了功率IC的微观功率金属堆栈,以演示这种新的仿真方法并给出了结果。这些数值模拟(其中包括矩阵中的非线性行为)表明,可以获得有关微场中较大应力和应变梯度的详细信息。

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