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A wideband low power merged balance-balun-LNA and I/Q-mixer

机译:宽带低功耗合并余额 - BaluN-LNA和I / Q混合器

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This paper presents a low power wideband RF receiver front-end in CMOS 180 nm technology that operates between 0.3 and 4.7 GHz. The mixer has a quadrature current commutating gilbert cell configuration that utilizes a novel broadband noise-canceling balanced balun-LNA as the transconductance stage. The noise-canceling balun LNA utilizes an additional noise-reduction technique that enhances its performance noticeably. Both of the common gate and common source stages of balun LNA are matched by employing equal-sized transistors that are biased with the same currents and load resistances. This technique results in superior symmetry, enhanced noise, and linearity performance under reduced power consumption. Post-layout simulation results show that the implemented balun LNA-I/Q-mixer has a conversion gain of 14.05 dB. The second and third-order intermodulation intercept points are +42.13 dBm and +4.13 dBm, respectively. The double-sideband NF is 4.74 dB. The proposed structure consumes only 6.7 mW from a 1.8 V supply and occupies a 0.056 mm(2) chip area.
机译:本文在CMOS 180 NM技术中介绍了低功耗宽带RF接收器前端,操作在0.3和4.7GHz之间。混频器具有正交电流换向Gilbert电池配置,其利用新颖的宽带噪声消除平衡平衡的Baluanc-LNA作为跨导级。降噪BaruN LNA利用额外的降噪技术,显着增强其性能。通过采用具有相同电流和负载电阻的相等尺寸的晶体管,平衡栅极LNA的公共栅极和公共源级都匹配。该技术导致降低功耗下的卓越对称性,增强噪声和线性性能。后布局仿真结果表明,已实施的BalUn LNA-I / Q混合器具有14.05 dB的转换增益。第二和三阶互调截距点分别为+ 42.13 dBm和+ 4.13dBm。双边带NF为4.74 dB。所提出的结构仅消耗1.8 V供电的6.7兆瓦,占用0.056毫米(2)芯片区域。

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