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New noise cancellation topology in common-gate LNAs

机译:公共门LNA中的新噪声消除拓扑

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In this paper a new approach for designing noise canceling common gate (CG) low noise amplifiers (LNAs) is proposed. This method investigates using inductively degenerated common source (IDCS) stage in parallel with CG stage instead of common source (CS) stage. Considering special specification of IDCS LNA, proposed topology can achieve lower noise figure (NF) and better input impedance matching. Analytical calculation for this topology is performed and the equations to satisfy input impedance matching along with noise cancellation condition are presented. The NF of proposed LNA is also calculated while satisfying these conditions by using the calculation of each noise source's transfer function. To validate theoretical analysis, two different LNAs in X band are designed and optimized. The simulations are performed using Advanced Design System (ADS) electromagnetic momentum with GaAS pHEMT 0.1 mu m process model. The results shows the proposed method can achieve better input impedance matching and lower NF while the output impedance matching and gain have relatively the same behavior.
机译:本文提出了一种设计噪声消除公共栅极(CG)低噪声放大器(LNA)的新方法。该方法使用与CG阶段并联的电感退化的公共源(IDCS)阶段来研究,而不是公共源(CS)阶段。考虑到IDCS LNA的特殊规范,所提出的拓扑可以实现较低的噪声系数(NF)和更好的输入阻抗匹配。呈现了对该拓扑的分析计算,并且呈现了满足输入阻抗匹配以及噪声消除条件的方程。还通过使用每个噪声源的传递函数来满足这些条件,计算所提出的LNA的NF。为了验证理论分析,设计和优化了X频带中的两个不同的LNA。使用具有GaAs Phemt0.1μM过程模型的高级设计系统(ADS)电磁动量进行模拟。结果显示所提出的方法可以在输出阻抗匹配和增益具有相对相同的行为的同时实现更好的输入阻抗匹配和更低的NF。

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