首页> 外文期刊>Microelectronics journal >Ultra-wideband Quadrature LC-VCO using Capacitor-Bank and backgate topology with on-chip spirally stacked inductor in 0.13 μm RF-CMOS process covering S-C bands
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Ultra-wideband Quadrature LC-VCO using Capacitor-Bank and backgate topology with on-chip spirally stacked inductor in 0.13 μm RF-CMOS process covering S-C bands

机译:超宽带正交LC-VCO使用电容器 - 组和带有片上螺旋堆叠电感的电容器拓扑,在0.13μm的RF-CMOS工艺中覆盖S-C带

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Frequency tracking and synthesizer at the mm-wave range suffer an everlasting compromise between phase noise (PAT) performance and frequency tuning range (FTR) irrespective of the topology adopted. This work proposes an Ultra-Wide Band, Quadrature Voltage Controlled Oscillator (QVCO) employing an on-chip inductor and 8-Bit Capacitor-Bank (Cap-Bank) in addition to the MOS-Varactors, to bring in the best compromise between above two said constraints. The additional efforts are kept generating Quadrature operation and keeping the power dissipation in an optimized range. It is shown that unlike conventional current reuse and wider MOS topology, the proposed Cap-Bank array with scaled transistor-based switches effectively widens the tuning operation with a remarkable FTR up to 85.7%, covering the most frequently used wireless standards IEEE-802.11 a/b/g of Bluetooth and Wi-Fi in S and C bands respectively. The design has been implemented with 0.13 mu m RF-CMOS process in ADS (Keysight Technologies). The Back-Gate topology has been used with the cross-coupled differential structure which generates the quadrature phased signals well-shaped and with the least add on power dissipation. Use of a low-loss on-chip spirally stacked inductor, enhances the chip integrity, spectrum quality and improves Phase Noise performance, providing the best phase noise of -164 dBc/Hz a 1 MHz (near f(max)) at a power dissipation of 12 mW from 1.2 V supply. The VCO gain achieved for the entire range of 2.4-6 GHz, varies largely from 1332 MHz/V (near f(max) = 6 GHz) to 42 MHz/V (near f(max) = 2.4 GHz) for the coarse tuning of Cap-Bank.
机译:无论采用的拓扑结构如何,MM波范围处的频率跟踪和合成器遭​​受相位噪声(PAT)性能和频率调谐范围(FTR)之间的永恒折衷。这项工作提出了一种超宽带,采用片上电感器和8位电容器 - 组(Cap-Bank)的超宽带,正交电压控制振荡器(QVCO),但除了MOS变容仪之外,还可以在上面的最佳折衷两个说法的约束。额外的努力保持正交操作,并将功耗保持在优化范围内。结果表明,与传统的电流重用和更广泛的MOS拓扑不同,所提出的帽组阵列具有基于缩放的晶体管的交换机,有效地扩展了高达85.7%的显着FTR的调谐操作,涵盖了最常用的无线标准IEEE-802.11 a / B / g的蓝牙和WI-FI分别在S和C条带中。该设计已在广告(Keysight Technologies)中以0.13 mu m rf-cmos过程实现。背栅拓扑已经与交叉耦合的差分结构一起使用,该差分结构产生正交相控信号井状,并且具有最少的功率耗散。使用低损耗片上螺旋堆叠电感,提高芯片完整性,频谱质量,提高相位噪声性能,提供-164 dBc / Hz A 1 MHz的最佳相位噪声(近F(最多))从1.2 V供应耗散12兆瓦。为整个2.4-6 GHz的范围实现的VCO增益主要来自1332 MHz / v(近F(最多)= 6 GHz)到42 MHz / v(近F(最多)= 2.4 GHz)进行粗调帽银行。

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