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A non-overlapped implantation MOSFET differential pair implementation of bidirectional weight update synapse for neuromorphic computing

机译:一种非重叠的植入MOSFET差异对实现,用于神经形态计算的双向重量更新突触

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A non-volatile memory (NVM) differential pair realization of the synaptic weight for an artificial neural network (ANN) circuit is investigated. Two non-overlapped implantation (NOI) nMOSFETs are proposed to form a NVM differential pair as an artificial synapse. The pair of NOI transistors are non-volatile analog memories and capable of storing positive or negative synaptic weight. In this study, a NOI differential pair based silicon neural chip of three neurons with 36 analog synapses in total is designed, simulated, fabricated, and verified by the chip-in-the-loop learning process. The classification performance of the neural chip when training and testing with the IRIS dataset is reported. This differential pair design not only overcomes the potential constraint in the weights of NOI but also exhibits better classification performances than that of single NOI-based ANN.
机译:研究了人工神经网络(ANN)电路的非易失性存储器(NVM)差分对实现。提出了两个非重叠的植入(NOI)NMOSFET以形成NVM差异对作为人工突触。一对NOI晶体管是非挥发性模拟存储器,并且能够存储正或负突触重量。在该研究中,通过芯片在循环学习过程设计,模拟,制造和验证了总基于36个模拟突触的三个神经元的NOI差分对的硅神经芯片。报告了在与IRIS数据集进行训练和测试时神经芯片的分类性能。这种差分对设计不仅克服了NOI的权重的潜在约束,而且表现出比单一NOI的ANN更好的分类性能。

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