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Electrically reconfigurable logic design using multi-gate spin Field Effect Transistors

机译:使用多栅旋转场效应晶体管的电可重构逻辑设计

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In this paper, triple- and quadruple-gate spin-FETs are proposed and later Verilog-A model files of the modelled devices have been created and included in HSPICE tool to obtain various 2-input and 3-input logic functions. Different logic functions are obtained from a single multi-gate spin-FET by changing control voltage at one of the gate terminal, while applying inputs at the other gate terminals. Only one triple-gate and quadruple-gate spin-FETs are employed to implement various 2-input and 3-input logic functions respectively. The implemented functions also include 3-input XOR and majority gate functions which form the sum and carry of full-adder circuit. Besides, the achievement of higher-order logic functions has been demonstrated by cascading the multi-gate spin FETs. In addition, the effect of channel length for obtaining different logic functions has been considered in the paper. The operations of the logic circuits have been verified using HSPICE simulation software.
机译:在本文中,提出了三倍和四栅门旋转FET,并且稍后的Verilog-已经创建了建模设备的模型文件,并包括在HSPICE工具中,以获得各种2输入和3输入逻辑功能。通过在栅极终端之一处改变控制电压,在另一个栅极终端处的输入,从单个多栅旋转FET获得不同的逻辑功能。仅采用一个三栅极和四端栅极自旋FET来分别实现各种2输入和3输入逻辑功能。实现的功能还包括3输入XOR和多数栅极函数,其形成全加法器电路的总和和携带。此外,通过级联多栅极旋转FET来证明了高阶逻辑功能的实现。此外,本文已经考虑了用于获得不同逻辑功能的信道长度的效果。使用HSPICE仿真软件验证了逻辑电路的操作。

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