Explicit continuous Ⅰ-Ⅴ model for 2D transition metal dichalcogenide field-effect transistors

摘要

In this paper, an explicit continuous I-V model was proposed for field-effect transistors (FETs) with 2-dimensional (2D) transition metal dichalcogenide (TMD) as the semiconductor. The model was derived by means of charge control method. The explicit continuous I-V model was compared with the implicit I-V model, which had been proved valid for FETs based on 2D TMDs. The explicit I-V model agrees well with exact numeric solution of the implicit I-V model. In addition, the explicit continuous model is proven valid by comparing it with the experimental data reported.