GaN-based LSK demodulators for wireless data receivers in high-temperature applications

摘要

GaN (gallium nitride)-based fully-integrated demodulators are presented. These modules, intended for wireless applications, target high-temperature (HT) environments including monitoring devices in aerospace. The presented demodulators are dedicated to recover Load-shift keying signals modulating a low carrier frequency to maximize power transfer efficiency and increase data transmission rate through metallic barriers. Logic gates are implemented and successfully tested at HT exceeding 400 degrees C. Proposed demodulators are built from half and full bridge rectifiers, comparators, voltage references and inverters, and operate at a minimum carrier frequency (f(c)) of 50 kHz. A demodulator based on a digital topology is proposed to cover MHz range f(c). A complementary +/- 14 V supply voltage is required to operate the circuits. Reported post-layout simulation results validate the functionality and performance offered by the proposed demodulators over the 25 degrees C-400 degrees C temperature range. Also, a complete chip layout has been done, where the introduced demodulators occupy 10 mm(2) of a GaN die area.