Nanopatterning of organic and inorganic materials by holographic lithography and plasma etching

摘要

We report on the nanopatterning of semiconductors and conjugated polymers to produce photonic band gap structures. Poly(p-phenylenevinnylene) (PPV) thin film prepared by spin coating on ITO-coated glass, GaAs and Si substrates were successfully processed. The technological process for the patterning was based on U.V. holographic lithography (364 nm line of Ar+Laser) and plasma etching. First a photoresist layer was deposited on the sample surface and exposed to an interference pattern in a "corner cube" interferometer, with multiple exposure capability, in order to realize pattern of lines, squares, pillars and holes. The shape of the pllars and holes, produced by double exposure, can be changed by rotating the sample by angles in the range between 30 and 90 degrees. Each step in the mask production procedure was carefully controlled by AFM measurements.