Comparison of experimental and Monte Carlo results of stochastic Coulomb interaction in prejection beam lithography

摘要

Coulomb interaction limits the beam current for a required resolution but it can be influenced by the about of the optical system. Therefore it is necessary to obtain design information for future charged particle lithography tools. Monte Caro simulations are an important tool in this design. Two of these programs, COUTRAC and BOERSCH, are compared with experiment data of an Ion Projection Lithography (IPL) set-up. The results of COUTRAC are in agreement with the measurements to within 19/100 in case of a uniform cross-over, With an aborted cross-over the difference increases to 126/100 near the axis since the experiment showed no increase of Coulomb interaction over the inner quarter of the exposure field while both Monte Carlo models show a monotone increase to the axis.