BipFLASH~1: A novel non-volatile memory cell concept for high-speed, low-power applications

摘要

We present a novel non-volatile memory cell architecture, which remarkably improves injection efficiency over conventional channel hot electron programming. We show how this superior performance can be traded to achieve either low voltage-low power or high-speed operation. The cell concept is validated by means of numerical device simulations. Criteria for device optimization are also discussed.