Four-angle evaporation method for the preparation of single electron tunneling devices

摘要

With a view to improving the performance of single electron tunneling (tunneling (SET) devices, it is desirable to minimize the charege island dimensions. This would allow higher operating temperatures to be achieved by a reduction of the island capacitance and the background charge noise to be reduced by minimization of the contact area between island and substrate. In this paper, a new fabrication method is presented which combines a four-angle evaporation method with a dry etching Process and allows SET devices to be prepared with self-aligned positioning of a small island.