Reduction of post exposure delay tie and contamination sensitivity in chemically amplified resists: application for lithography using off-line environment

摘要

The chemically amplified concept is directly linked to the diffusion capabilities of the photo-generated acid. As a consequence of this principle, delay time effect during processing may affect lithographic performance. This paper discusses the post exposure delay time impact on final image formation. It presents a solution based on inert atmosphere storage for off-line lithographic processes with which sub-50-nm patterns can be resolved even if the wafer is stored for more than 24 h after exposure.