Study of the fabrication of PHEMTs for a 0.1 μm scale Γ-gate using electron beam lithography: structure, fabrication, and characteristics

摘要

For millimeter-wave bands, achieving a very small gate length and an extremely low gate resistance is arguably the single most important technology in manufacturing power GaAs-based pseudomorphic high electron mobility transistor (PHEMT) devices with the properties of high power, high reliability, high throughput and low noise. In order to obtain maximum speed performance from a PHEMT, it is not sufficient to simply use higher mobility materials or structures, it is also necessary to minimize the parasitic resistance (gate resistance and source and drain ohmic contact resistances) and device capacitances if the full potential of the high-speed performance and low minimum noise are to be obtained.