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Oxygen vacancies in tetragonal ZrO_2: ab initio embedded cluster calculations

机译:四方ZrO_2中的氧空位:从头算嵌入簇计算

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Formation of oxygen vacancies in bulk tetragonal ZrO_2 and at its (101) and (001) surfaces was studied using ab initio embedded cluster calculations. A new technique was proposed for generating a set of point charges that represents the Coulomb field of the crystal environment both for bulk and surface cluster structures. This technique provides the rapid convergence of the calculated Madelung potential to the unique true value. The estimated bulk vacancy formation energy in tetragonal ZrO_2 is 8.8 eV, while surface vacancy energy formation depends on the type of the surface and position of removed oxygen atom and varies from 8.3 to 9.3 eV. The calculated activation energy of oxygen vacancy migration in bulk ZrO_2 is 1.95 eV.
机译:使用从头算嵌入簇计算研究了本体四方ZrO_2及其(101)和(001)表面中氧空位的形成。提出了一种新技术来生成一组点电荷,该点电荷既表示块体结构又表示表面簇结构,该表示晶体环境的库仑场。该技术使计算出的马德隆电位迅速收敛到唯一的真实值。四方形ZrO_2中估计的空位形成能为8.8 eV,而表面空位能量的形成取决于表面的类型和被去除的氧原子的位置,其范围为8.3至9.3 eV。 ZrO_2本体中氧空位迁移的计算活化能为1.95 eV。

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