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Efficient preparation of La@C_(60), C_(60)Br_(24) and the electrical conductivity of sulfur-doped C_(60) films

机译:La @ C_(60),C_(60)Br_(24)的高效制备和硫掺杂的C_(60)薄膜的电导率

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La@C_(60) is prepared in gram quantities using anode-arc vaporization of graphite rod with 99.9% purity lanthanum powder wick in a 150-Torr atmosphere of helium. C_(60)Br_(24) is prepared by mixing 99.9% purity of C_(60) powder with neat bromine and iron powder catalyst at ambient temperature. The temperature-dependent conductivities of sulfur-doped C_(60) films are measured. The obvious semiconductive properties are confirmed in the temperature range from ambient temperature to 368 K. The activation energy decreases and the conductivity increases with an increase in the sulfur doping level. C_(60) and C_(70) are prepared in quantities by using anode-arc vaporization of graphite rod in an atmosphere of helium and the optimal conditions of preparation are contained in this paper.
机译:La @ C_(60)是在150Torr的氦气气氛中使用具有99.9%纯度的镧粉芯的石墨棒的阳极电弧蒸发法以克量制备的。通过在环境温度下将99.9%的C_(60)粉末与纯溴和铁粉催化剂混合来制备C_(60)Br_(24)。测量了硫掺杂的C_(60)薄膜的温度依赖性电导率。在环境温度至368 K的温度范围内证实了明显的半导体性能。随着硫掺杂水平的提高,活化能降低,电导率提高。利用氦气中石墨棒的阳极电弧气化法大量制备了C_(60)和C_(70),并给出了最佳的制备条件。

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