Radiation damage of Si photodiodes by high-temperature irradiation

摘要

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes. The macroscopic device performance is correlated with the radiation-induced defects observed by DLTS. It was found that the dark current increases after irradiation, while the photocurrent decreases. After irradiation, two majority electron capture levels (Ec 0.40 eV) were induced in the n-Si substrate. Additionally, degradation of device performance and the rate of introduction of lattice defects decrease with increasing irradiation temperature. For 250 ℃ irradiation, the reduction of the photocurrent is only 10% of the starting value. This result suggests that the creation and recovery of radiation damage proceed simultaneously at high temperatures.