Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique

摘要

The newly introduced transient charge pumping (TCP) technique is used to characterize hot-carrier effects in floating body SOI MOSFETs for the first time. Its unique advantage is the possibility to characterize SOI transistors without a body contact. The method was tested on state-of-the-art 0.13-μm partially depleted devices. TCP measurements performed in the course of a hot-carrier stress allow monitoring the interface traps density. It was observed that the measured trap density kinetics correlates well with the device parameter degradation. The results obtained demonstrate a high potential for our TCP method in the evaluation of the reliability of floating body transistors.