CD control of direct versus complementary exposure for shaped beam writers and its correlation to the local registration error

摘要

When using electron beam direct write for patterning, resist selection (positive or negative) plays an important role. This is because writing time for shaped beam machines is proportional to the mean density of exposed shapes. There is an optimum with respect to writing time when using either the direct exposure or the complementary exposure with reversed resist tonality. Switching from positive to negative resist or vice versa has an impact on writing time. In this paper, we derive the fundamental differences on CD accuracy when using direct or complementary exposure, which is given by the local registration error. Additionally, a simple method is developed to measure this local registration error by simple CD SEM measurement of 1:1 line/space patterns.