Atomic structure analysis of self-assembled ErSi_2 nanowires formed on Si substrates

摘要

ErSi_2 nanowires were fabricated on Si(110) substrates by a self-assembled growth process without a high vacuum systems. All the nanowires were highly parallel and along the Si< 011 > direction. It was shown by structural investigations that the nanowires consisted of two types, which showed a similar surface morphology. The first type was ErSi_2 nanowires buried into the Si substrate, and the other was ErSi_2 thin layers covering on wire-like Si surface. The later may be the remained structure after evaporation of the first type during the high temperature annealing.