A Moire method for high accuracy alignment in nanoimprint lithography

摘要

Nanoimprint lithography (NIL) is a cost efficient technique for the mass production of nanostructures. We demonstrate alignment accuracies in the range of 100nm and below in UV-based nanoimprint lithography (UV-NIL) using a simple optical technique. The advantages of this technique are the relative simplicity of the marker-design and the whole setup combined with the possibility of an upgrade of existing equipment and still ultra-high precision alignment capabilities.