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Periodic sub-wavelength electron beam lithography defined photonic crystals for mode control in semiconductor lasers

机译:周期性亚波长电子束光刻定义的光子晶体,用于半导体激光器的模式控制

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摘要

Surface structure lasers possess lithographically defined patterns, such as gratings and waveguides, on the wafer surface and are usually fabricated without semiconductor regrowth. Optical surface structures typically require sub-micron to nano-scale accuracy in fabrication. For surface structures with more complex geometries, electron beam lithography offers the necessary flexibility, control, and accuracy in fabrication. However, a challenge with electron beam lithography is the patterning of large (~1 mm by 1 mm) areas while maintaining the fabrication accuracy. In this work, we demonstrate two electron beam lithography techniques in a process for the fabrication of surface structure lasers with large areas that require sub-micron to nanometer accuracy. The first technique uses proximity effect correction to fabricate two-dimensional surface gratings each consisting of approximately one million 100 nm diameter circles over an 800 μm by 160 μm area. The second part of the process uses overlay lithography with an alignment accuracy better than 45 nm over a 1 mm by 3.2 mm area to planarize waveguide array lasers.
机译:表面结构激光器在晶片表面上具有光刻定义的图案,例如光栅和波导,并且通常在没有半导体再生长的情况下制造。光学表面结构在制造中通常需要亚微米至纳米级的精度。对于具有更复杂几何形状的表面结构,电子束光刻可提供必要的灵活性,控制能力和制造精度。但是,电子束光刻技术面临的挑战是在保持制造精度的同时对大面积(约1mm x 1mm)进行构图。在这项工作中,我们展示了两种电子束光刻技术,用于制造需要亚微米至纳米精度的大面积表面结构激光器。第一种技术使用邻近效应校正来制造二维表面光栅,每个表面光栅在800μmx 160μm的面积上由大约一百万个100 nm直径的圆组成。该工艺的第二部分使用覆盖光刻技术,其在1 mm x 3.2 mm的区域上的对准精度优于45 nm,以平坦化波导阵列激光器。

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