Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory

摘要

Introduction of high-k dielectrics in Flash memory is seen as a must for the upcoming technology nodes. Hafnium aluminate (HfAlO) has been identified as a possible candidate for implementing the interpoly dielectric in floating gate memory. In this work, we establish a link between the material morphology and its electrical response, allowing to understand memory device behavior and to consequently assess the potential and limitations of HfAlO as IPD in a memory cell.