机译:ZnO纳米线在磁场中的选择性排列,用于制造气隙场效应晶体管
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yomei University, 134 Shinchon-dong,Seodaemun-gu, Seoul 120-749, Republic of Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yomei University, 134 Shinchon-dong,Seodaemun-gu, Seoul 120-749, Republic of Korea Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yomei University, 134 Shinchon-dong,Seodaemun-gu, Seoul 120-749, Republic of Korea;
School of Nano and Advanced Materials Engineering, Changwon National University, 9 Sarim-dong, Changwon, Cyoungnam 641-773, Republic of Korea;
Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yomei University, 134 Shinchon-dong,Seodaemun-gu, Seoul 120-749, Republic of Korea;
ZnO nanowire; field-effect transistor; air-gap structure; magnetic alignment;
机译:ZnO纳米线的交流介电电泳对准及其随后在场效应晶体管中的使用
机译:ZnO纳米线的合成及其在介电电泳对准形成的高电流场效应晶体管中的后续应用
机译:使用水热生长的ZnO纳米线制造场效应晶体管和功能纳米发电机
机译:ZnO纳米线场效应晶体管:臭氧感应阈值电压差和多纳米线效应
机译:选择性接触双沟道高电子迁移率场效应晶体管的制作与分析
机译:基于选择性化学的半导体分离单壁碳纳米管和纳米管阵列的对准用于场效应晶体管应用的电场下的网络
机译:高产率的TiO(2)纳米线合成和单纳米线场效应晶体管制造