Pentacene/n -Si heterojunction diodes and photovoltaic devices investigated by I-V and C-V measurements

摘要

The forward and reverse current density-voltage C/-V) and capacitance-voltage (C-V) characteristics of pentacene/n"-silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. Current rectification characteristics of the pentacene/n"-Si junctions can be explained by a Schottky diode model with an interfacial layer. The diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.79-1.0 eV and 2.4-2.7, respectively. The C-V analysis suggests that the depletion layer appears selectively in the n"-Si layer with a thickness of 1.47 urn from the junction with zero bias and the diffusion potential was estimated at 0.30 eV at the open-circuit condition. The present heterojunction allows the photovoltaic operation with power conversion efficiencies up to 0.044% with a simulated solar light exposure of 100 mW/cm2.