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机译:纳米金属颗粒在16 nm栅极高κ/金属栅极体FinFET器件中引起电特性波动
Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan,Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Institute of Communications Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
metal gate; TiN gate; random work function; bulk FinFET; threshold voltage fluctuation; random grain's size; number and position; large scale 3D device simulation;
机译:纳米金属晶粒随机功函数在16nm栅极FinFET中的阈值电压波动
机译:16nm门高k /金属栅极互补金属氧化物半导体器件和反相器电路中的随机接口陷阱引起的电特性波动
机译:高κ/金属栅体FinFET器件的固有参数波动
机译:纳米金属颗粒在带有TiN / HfO
机译:室温下长时间静态静载荷引起的大块金属玻璃的热机械各向异性-以铜Ha铝大块金属玻璃为例。
机译:在存在随机界面陷阱的情况下16nm栅极高κ/金属栅极体FinFET器件的电特性波动
机译:在存在随机界面陷阱的情况下16nm栅极高κ/金属栅极体FinFET器件的电特性波动