机译:原始n-GaAs(00l)-4 x 6表面上Al_2O_3的原位原子层沉积和同步辐射发光研究
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan;
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan;
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan,Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan;
atomic layer deposition; molecular beam epitaxy; synchrotron-radiation photoemission; GaAs;
机译:Si(001)衬底上Al_2O_3薄膜的初始原子层沉积的原位同步辐射光谱研究
机译:多铁性BiFeO 3 sub>上Ba原子层沉积的同步辐射发光研究
机译:多铁性BiFeO 3 sub>上Ba原子层沉积的同步辐射发光研究
机译:Ⅲ-Ⅴ表面和高k原子层沉积的原位研究
机译:原位红外光谱研究钝化硅表面上高κ金属氧化物和金属的原子层沉积。
机译:富GaAs(001)-4×6和As富GaAs(001)-2×4表面上三甲基铝原子层沉积的原子-原子相互作用:同步辐射辐射光发射研究
机译:富GaAs(001)-4×6和As富GaAs(001)-2×4表面上三甲基铝原子层沉积的原子-原子相互作用:同步辐射辐射光发射研究