Investigation of reOxidation mechanisms in nitrided tunnel Oxides for Flash memory applications

摘要

Aggressive scaling of Flash memory devices requires robust tunnel Oxides to improve the cell performance while preserving the retention and endurance characteristics. In this context, reOxidation of the tunnel Oxide has recently [2] been proposed as a promising technique. In this paper, we focus our investigations on the mechanisms related to radical (O~*) or dry (O_2) reOxidation of nitrided tunnel Oxides.