机译:通过声表面波对铯掺杂多孔二氧化硅低k薄膜的杨氏模量评估
School of Electronic and Information Engineering, Tianjin University, Weijin Road 92, 300072 Tianjin, China,Research Institute for Nanodevices and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, 739-8527 Higashi-hiroshima, Japan;
School of Electronic and Information Engineering, Tianjin University, Weijin Road 92, 300072 Tianjin, China;
Research Institute for Nanodevices and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, 739-8527 Higashi-hiroshima, Japan;
Product Development Laboratory, Mitsui Chemicals Inc., 580-32 Nagaura, Sodegaura, 299-0265 Chiba, japan;
Product Development Laboratory, Mitsui Chemicals Inc., 580-32 Nagaura, Sodegaura, 299-0265 Chiba, japan;
Research Institute for Nanodevices and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, 739-8527 Higashi-hiroshima, Japan;
surface acoustic waves; low-k film; porous silica; young's modulus; cesium doping;
机译:LOW-k二维周期性多孔二氧化硅膜的弹性模量和介电常数的理论分析
机译:宽带DCC / LD LSAW法测定低k多孔膜的杨氏模量
机译:在充分考虑了基板影响的情况下,通过纳米压痕法确定多孔低k介电薄膜的杨氏模量和屈服强度
机译:通过激光生成的锯对低k薄膜的杨氏模量检测
机译:通过沉积方法和膜厚控制和设计PECVD碳掺杂低k二氧化硅薄膜的关键性能。
机译:在−50°C以上的条件下使用微毛细管冷凝对多孔有机硅低k进行无损等离子体刻蚀
机译:纳米压痕的二维有限元模拟提取多孔超薄低k薄膜的弹性模量