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Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in A12O3 matrix

机译：沉积参数对嵌入Al 2 O 3基体中的SiGe纳米晶体生长的影响

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摘要

Si_(1-x)Ge_x nanocrystals (NCs), embedded in A1_2O_3 matrix, were fabricated on Si (100) substrates by RF-magnetron sputtering technique with following annealing procedure at 800 °C, in nitrogen atmosphere. The presence of Si_(1-x)Ge_x NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si_(1-x)Ge_x NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si_(1-x)Ge_x (x~ 0.8) NCs sized between 3 and 4 nm in A1_2O_3 matrix were established.
机译：通过RF-磁控溅射技术，在氮气气氛下，在800°C下进行以下退火工艺，在Si（100）衬底上制备了嵌入Al_2O_3基质中的Si_（1-x）Ge_x纳米晶体（NCs）。通过掠入射X射线衍射（GIXRD），掠入射小角X射线散射（GISAXS）和拉曼光谱证实了Si_（1-x）Ge_x NCs的存在。分析了生长条件对氧化铝基体内部Si_（1-x）Ge_x NCs的结构性能和组成的影响。建立了在Al_2O_3基体中生长尺寸为3-4nm的Si_（1-x）Ge_x（x〜0.8）NCs的最佳条件。

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  • 来源
    《Microelectronic Engineering》 |2011年第4期|p.509-513|共5页
  • 作者

    E.M.F. Vieira; S.R.C. Pinto; S. Levichev; A.G. Rolo; A. Chahboun; M. Buljan; N.P. Barradas; E. Alves; S. Bernstorff; 0. Conde; M.J.M. Gomes;

  • 作者单位

    Physics Department and Centre of Physics, University of Minho, 4710 - 057 Braga, Portugal;

    Physics Department and Centre of Physics, University of Minho, 4710 - 057 Braga, Portugal;

    Physics Department and Centre of Physics, University of Minho, 4710 - 057 Braga, Portugal;

    Physics Department and Centre of Physics, University of Minho, 4710 - 057 Braga, Portugal;

    Physics Department and Centre of Physics, University of Minho, 4710 - 057 Braga, Portugal,LPS, Physics Department. Faculty of Sciences, BP 1796, Fes, Morocco;

    Rudjer Boskovic Institute, Bijenicka cesta 54, 10000 Zagreb, Croatia;

    TN, lonBeam laboratory. Unit of Physics and Accelerators, E.N. 10, 2686-953 Sacavem, Portugal;

    TN, lonBeam laboratory. Unit of Physics and Accelerators, E.N. 10, 2686-953 Sacavem, Portugal;

    Sincrotrone Trieste, 34012 Basovizza, Italy;

    Physics Department, University of Lisbon and ICEMS, 1749-016 Lisboa, Portugal;

    Physics Department, University of Lisbon and ICEMS, 1749-016 Lisboa, Portugal;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    semiconductors; magnetron sputtering; si_(1-x)ge_x nanocrystals; mullite; gixrd; raman scattering; gisaxs;

    机译：半导体;磁控溅射;si_（1-x）ge_x纳米晶体;莫来石;gixrd;拉曼散射;gisax;

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