Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si(100) substrate near the interface

摘要

The angle-resolved Si 2p photoelectron spectra arising from transition layer formed between bulk SiO_2 and bulk Si(100)-substrate were measured with probing depth of nearly 2 nm. The influence of oxidation temperature in the range from 900 ℃ to 1050 ℃, annealing in forming gas at 400 ℃, and oxidation using oxygen radicals at 400 ℃ on the chemical structures of interfacial transition layer were clarified. It was found for the thermally grown interfacial transition layer that two compositional transition layers (CTLs) are formed on the oxide side of the CTL/Si interface and the oxidation-induced chemical structures are formed on the Si substrate side of the interface. Furthermore, a part of the oxidation-induced chemical structures in the Si substrate near the interface was found to be closely correlated with the oxidation-induced residual stress near the interface.