Selector-less RRAM with non-linearity of device for cross-point array applications

摘要

We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation currents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiO_x/TiO_y, bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents.