GaN-based LED micro-displays for wearable applications

摘要

LED micro-displays offer diverse applications with their superior characteristics and unique performance, particularly in high light utilization efficiency (LUE), design simplicity, long lifetime, and excellent visibility under bright day-light. In this work, we designed and fabricated GaN-based light emitting diode on silicon (LEDoS) micro-displays by integrating monolithic LED micro-arrays and active matrix substrates using flip-chip technology. The LEDoS micro-displays have been developed in generations with increasing display resolutions and scaled pixel pitches. Representative display images have been demonstrated and show great potential in wearable electronic and photonic applications. (C) 2015 Elsevier B.V. All rights reserved.