A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-kappa dielectrics for III-V MOSFETs

摘要

In this paper we present a novel defect spectroscopy technique to investigate the properties of high-kappa metal-gate oxides. This technique, based on the simultaneous simulations of I-V, C-V and G-V curves at different frequencies, allows profiling the distribution of interfacial and bulk defects inside the gate oxide and investigating the composition of the high-kappa stacks on III-V materials. The proposed technique is applied to investigate the properties of high-kappa stacks of InGaAs MOSFETs. (C) 2015 Elsevier B.V. All rights reserved.