Optimal process integration of gate insulator and a-Si layers in large-sized a-Si thin-film-transistor

摘要

An optimal process integration on the gate insulator (GI) and intrinsic a-Si layer of large-sized amorphous silicon thin film transistor (a-Si TFT) is proposed in this work to effectively reduce off current (I-off) and threshold voltage (V-th) shift under high and low electrical-field stresses. The proposed optimal integration is to apply the better deposition conditions of gate insulator (GI) and a-Si layer. It is experimentally found that the I-off of large-sized a-Si TFT with the optimal integration can be reduced by at least 50%, and the Vth shift (Delta V-th) after high and low electrical-field stresses can also be reduced by around 40%. (C) 2015 Elsevier B.V. All rights reserved.