The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory

摘要

In this paper, the influence of the band-gap energy of metal oxide layers on the non-linearity of the device had been investigated. The band-gap energy of the metal oxide layer determines barrier height of tunneling between metal oxides and electrodes for tunneling mechanisms. The optimum barrier height between the metal oxides and electrodes exhibits high non-linear characteristics of the device for low leakage current of the cross-point array applications with excellent switching uniformity. (C) 2015 Elsevier B.V. All rights reserved.