Top-down fabrication of horizontally-aligned gallium nitride nanowire arrays for sensor development

摘要

This paper demonstrates a high-throughput fabrication method of gallium nitride (GaN) nanowire (NW) and sub-micron wire (SMW) arrays using a combination of projection lithography, plasma etching, and post-plasma wet etching techniques. Photoluminescence (PL), field emission scanning electron microscopy (FFSEM), and I-V measurements were used to characterize the GaN NW/SMW devices. These NWs/SMWs can be used to create highly-sensitive and selective conductometric chemical/bio-sensors.