Modular integration of annular TSV structures filled with tungsten in a 0.25 mu m SiGe:C BiCMOS technology

摘要

The through silicon via (TSV) technology is a key solution for enhancement of functionality and performance of integrated chips. The replacement of bond wires by TSVs is a new possibility to create a low parasitic ground for high frequency applications. Therefore, we implemented TSVs filled with tungsten in our high frequency 0.25 mu m SiGe:C BiCMOS technology. Here, we demonstrate our concept for integration of annular TSVs with a depth of 75 mu m and a width of 3 mu m.