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机译:SiOxNy表面钝化层在提高ELA多晶硅薄膜晶体管的稳定性和降低扭结效应方面的作用
Sungkyunkwan Univ, Coll Informat & Commun Engn, Sch Elect Elect Engn, Informat & Commun Device Lab, 300 Cheoncheon Dong, Suwon 440746, South Korea|HCM Int Univ, VNU, Dept Phys, Linh Trung Ward, Block 6, Hcm City, Vietnam;
Sungkyunkwan Univ, Coll Informat & Commun Engn, Sch Elect Elect Engn, Informat & Commun Device Lab, 300 Cheoncheon Dong, Suwon 440746, South Korea;
Sungkyunkwan Univ, Coll Informat & Commun Engn, Sch Elect Elect Engn, Informat & Commun Device Lab, 300 Cheoncheon Dong, Suwon 440746, South Korea|Hanoi Univ Sci & Technol, Int Training Inst Mat Sci, Hanoi, Vietnam;
Sungkyunkwan Univ, Coll Informat & Commun Engn, Sch Elect Elect Engn, Informat & Commun Device Lab, 300 Cheoncheon Dong, Suwon 440746, South Korea|Ho Chi Minh City Univ Technol & Educ, Fac Fdn Sci, Ho Chi Minh, Vietnam;
Sungkyunkwan Univ, Coll Informat & Commun Engn, Sch Elect Elect Engn, Informat & Commun Device Lab, 300 Cheoncheon Dong, Suwon 440746, South Korea;
Thin film transistor; NH3 and N2O plasma; SiOxNy ultra-thin layer; ELA poly-silicon; Kink effect reduction;
机译:具有SiO_x钝化层的非晶InGaZnO_4薄膜晶体管的偏置稳定性的提高
机译:具有SiOx钝化层的非晶InGaZnO4薄膜晶体管的偏置稳定性的改善
机译:由可光交联的聚乙烯醇和Na +蒙脱土制成的自旋自组装粘土纳米复合钝化层增强了有机薄膜晶体管的环境稳定性
机译:氟化氮化硅钝化改善InGaZnO薄膜晶体管的电性能和偏置稳定性
机译:双层非晶硅膜对晶体硅的表面钝化。
机译:钝化层对非晶InGaZnO薄膜晶体管正栅极偏置-应力稳定性的影响
机译:SiOxny:B型孔选择聚硅触点的前所掺杂层:钝化研究
机译:用于减少alGaN / GaN高电子迁移率晶体管(HEmT)中电流崩塌的表面钝化膜的比较