Dopant imaging of power semiconductor device cross sections

摘要

Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 10(14) cm(-3) to 10(19) cm(-3) on semiconducting samples. In our work we present Scanning Capacitance Force Microscopy (SCFM) and Kelvin Probe Force Microscopy (KPFM) experiments performed on cross sections of silicon (Si) and silicon carbide (SiC) power devices and epitaxially grown calibration layers. The contact potential difference (CPD) shows under illumination a reduced influence on surface defect states. In addition results from numerical simulation of these microscope methods are discussed. (C) 2016 Elsevier B.V. All rights reserved.